Defect-induced nucleation and growth of amorphous silicon.
نویسندگان
چکیده
Rights: © 1996 American Physical Society (APS). This is the accepted version of the following article: Lewis, Laurent J. & Nieminen, Risto M. 1996. Defect-induced nucleation and growth of amorphous silicon. Physical Review B. Volume 54, Issue 3. 1459-1462. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.54.1459, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.54.1459.
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عنوان ژورنال:
- Physical review. B, Condensed matter
دوره 54 3 شماره
صفحات -
تاریخ انتشار 1996